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電(dian)(dian)解水(shui)納(na)米(mi)氣(qi)泡(pao)成(cheng)(cheng)核(he)動(dong)力學(xue)系(xi)統(tong)特(te)點(dian)：1、測量納(na)米(mi)電(dian)(dian)極上的超(chao)小(xiao)電(dian)(dian)流(liu)和電(dian)(dian)位變化2、超(chao)低噪音3、超(chao)高速(su)放大器響應(ying)速(su)度(du)4、*的恒(heng)流(liu)注入快速(su)控制(zhi)閾值(zhi)開/斷(duan)5、可(ke)以擴展(zhan)多種直(zhi)流(liu)DC和交流(liu)AC電(dian)(dian)化學(xue)技術電(dian)(dian)解水(shui)納(na)米(mi)氣(qi)泡(pao)成(cheng)(cheng)核(he)動(dong)力學(xue)系(xi)統(tong)應(ying)用：1、電(dian)(dian)解水(shui)納(na)米(mi)氣(qi)泡(pao)成(cheng)(cheng)核(he)動(dong)力學(xue)研究2、納(na)米(mi)氧化顆粒碰撞/沖擊(ji)過程3、固態納(na)米(mi)孔單分子傳感4、納(na)米(mi)間隙電(dian)(dian)極的電(dian)(dian)催化5、單半導體納(na)米(mi)顆粒的光電(dian)(dian)流(liu)檢測

電(dian)化學噪聲測(ce)試(shi)儀用于監(jian)測(ce)電(dian)偶(ou)腐(fu)蝕(shi)或者電(dian)化學噪聲信號，具有較(jiao)高(gao)的(de)(de)靈敏度，儀器(qi)(qi)全部(bu)由高(gao)品質(zhi)CMOS和(he)BiFET集成電(dian)路(lu)組成，采(cai)用高(gao)可靠性(xing)的(de)(de)Philip工業級單片機(ji)控制芯片，以(yi)(yi)及TI公(gong)司的(de)(de)高(gao)精(jing)度數據(ju)轉換(huan)器(qi)(qi)ADS1211，其(qi)高(gao)分辨(bian)率為24bit@10Hz，高(gao)采(cai)樣速率為1000Hz，儀器(qi)(qi)內(nei)部(bu)采(cai)用了Maxim公(gong)司的(de)(de)斬波(bo)穩(wen)零放大器(qi)(qi)Max7650，其(qi)溫漂小(xiao)于1uV/℃，時(shi)漂小(xiao)于10uV/Month，內(nei)置二階(jie)低通濾波(bo)器(qi)(qi)，可以(yi)(yi)有效消除高(gao)頻(pin)噪聲進入(ru)測(ce)量單元，儀器(qi)(qi)還內(nei)置EMI濾波(bo)器(qi)(qi)，可以(yi)(yi)防止浪(lang)涌電(dian)壓...

掃(sao)(sao)描(miao)離(li)子(zi)電導顯微(wei)鏡(jing)SICM屬于掃(sao)(sao)描(miao)探(tan)(tan)(tan)(tan)針(zhen)(zhen)顯微(wei)鏡(jing)，它(ta)是一(yi)種具有(you)(you)納米(mi)級分辨率的顯微(wei)技術(shu)。區別于其他(ta)掃(sao)(sao)描(miao)探(tan)(tan)(tan)(tan)針(zhen)(zhen)顯微(wei)技術(shu)，SICM能夠在(zai)樣(yang)(yang)品表面非(fei)接觸的條件下獲取樣(yang)(yang)品表面形(xing)貌特性(xing)信息，并且(qie)SICM對樣(yang)(yang)品本身(shen)沒(mei)有(you)(you)要求,也不需(xu)做任何(he)預處理。掃(sao)(sao)描(miao)離(li)子(zi)電導顯微(wei)鏡(jing)技術(shu)優勢：1、探(tan)(tan)(tan)(tan)針(zhen)(zhen)是一(yi)根(gen)中空的超微(wei)玻璃管，針(zhen)(zhen)尖為錐形(xing)，針(zhen)(zhen)尖內徑約幾十到幾百納米(mi)。2、在(zai)探(tan)(tan)(tan)(tan)針(zhen)(zhen)內外均灌有(you)(you)電解(jie)質(zhi)溶液，并各放置一(yi)根(gen)電極(ji),在(zai)電極(ji)的兩端通(tong)上電壓就會(hui)在(zai)溶液中產生離(li)子(zi)電流。3、當針(zhen)(zhen)尖與樣(yang)(yang)品距離(li)較遠時，電流值的大小保持恒(heng)定，而當探(tan)(tan)(tan)(tan)針(zhen)(zhen)與樣(yang)(yang)...

電(dian)(dian)化(hua)學噪(zao)聲測(ce)(ce)(ce)(ce)試儀ECN是一種(zhong)原位無損的(de)(de)(de)監測(ce)(ce)(ce)(ce)技術，可以檢(jian)(jian)測(ce)(ce)(ce)(ce)土壤環境中(zhong)材料的(de)(de)(de)電(dian)(dian)化(hua)學噪(zao)聲，在測(ce)(ce)(ce)(ce)量過程中(zhong)無須對(dui)被測(ce)(ce)(ce)(ce)電(dian)(dian)極(ji)施加可能改變(bian)腐(fu)蝕電(dian)(dian)極(ji)腐(fu)蝕過程的(de)(de)(de)外界擾(rao)動；檢(jian)(jian)測(ce)(ce)(ce)(ce)設備簡單，且可以實現遠(yuan)距離監測(ce)(ce)(ce)(ce)。電(dian)(dian)化(hua)學噪(zao)聲測(ce)(ce)(ce)(ce)試儀的(de)(de)(de)使(shi)(shi)用(yong)注意細節：1、使(shi)(shi)用(yong)前應(ying)先閱讀說(shuo)明書，了解儀器(qi)(qi)的(de)(de)(de)使(shi)(shi)用(yong)方法(fa)與注意事項。2、噪(zao)音(yin)計注意防(fang)水，防(fang)止高空摔(shuai)。3、安裝電(dian)(dian)池或外接電(dian)(dian)源注意極(ji)性(xing)，切(qie)勿(wu)(wu)反接。4、長期不用(yong)應(ying)取下(xia)電(dian)(dian)池，以免(mian)漏液損壞儀器(qi)(qi)。5、傳聲器(qi)(qi)切(qie)勿(wu)(wu)拆卸(xie)，防(fang)止擲(zhi)摔(shuai)，不用(yong)時放置妥當。6、勿(wu)(wu)擅自拆卸(xie)儀器(qi)(qi)，如儀器(qi)(qi)不正常，可送修理單...

電(dian)(dian)(dian)(dian)化(hua)學(xue)工作站使用(yong)注意(yi)事項：1、開(kai)機時先開(kai)計算機再開(kai)啟電(dian)(dian)(dian)(dian)化(hua)學(xue)儀主(zhu)機電(dian)(dian)(dian)(dian)源，不可反(fan)復開(kai)關(guan)。2、關(guan)機時按照(zhao)先關(guan)軟件(jian)，再關(guan)電(dian)(dian)(dian)(dian)腦。3、軟件(jian)包含(han)數據處理部(bu)分，操(cao)作簡單(dan)快捷，適合現場野(ye)外測(ce)(ce)試。4、可用(yong)于腐(fu)蝕(shi)測(ce)(ce)試，電(dian)(dian)(dian)(dian)分析(xi)，傳感器(qi)，電(dian)(dian)(dian)(dian)池等。5、對樣品沒(mei)有特殊要求，金屬就可以(yi)測(ce)(ce)量，測(ce)(ce)試筆可以(yi)重復使用(yong)多次。電(dian)(dian)(dian)(dian)化(hua)學(xue)工作站故障(zhang)分析(xi)：故障(zhang)現象原因(yin)分析(xi)解(jie)決方法(fa)開(kai)機無任何顯示①電(dian)(dian)(dian)(dian)源未接通(tong)(tong)接通(tong)(tong)電(dian)(dian)(dian)(dian)源②儀器(qi)后(hou)面板插座內1A保險管(guan)斷(duan)路(lu)重新安裝或更換保險管(guan)無電(dian)(dian)(dian)(dian)流輸出(chu)①電(dian)(dian)(dian)(dian)極電(dian)(dian)(dian)(dian)纜線斷(duan)路(lu)或接線檢查電(dian)(dian)(dian)(dian)極電(dian)(dian)(dian)(dian)纜線，排(pai)除故障(zhang)②工作或...