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電(dian)化(hua)(hua)學(xue)(xue)石(shi)英(ying)(ying)(ying)晶(jing)體(ti)微(wei)(wei)天平(ping)(ping)是基于(yu)石(shi)英(ying)(ying)(ying)晶(jing)體(ti)振蕩(dang)片上(shang)(shang)(shang)吸附(fu)或沉(chen)積時，晶(jing)體(ti)振蕩(dang)頻(pin)率發生變(bian)(bian)化(hua)(hua)，它(ta)與(yu)晶(jing)片上(shang)(shang)(shang)沉(chen)積物的(de)質量(liang)變(bian)(bian)化(hua)(hua)有(you)簡單的(de)線性關(guan)系。電(dian)化(hua)(hua)學(xue)(xue)石(shi)英(ying)(ying)(ying)晶(jing)體(ti)微(wei)(wei)天平(ping)(ping)的(de)操(cao)作指南：1.開啟并預熱(re)CHI420電(dian)化(hua)(hua)學(xue)(xue)工(gong)作站:a.打開室(shi)內(nei)電(dian)源開關(guan)，檢查與(yu)電(dian)腦和工(gong)作站連接的(de)接線板(ban)(ban)是否處于(yu)通(tong)電(dian)狀(zhuang)(zhuang)態(tai)，啟動電(dian)腦。b.將(jiang)電(dian)化(hua)(hua)學(xue)(xue)工(gong)作站后面板(ban)(ban)上(shang)(shang)(shang)的(de)黑色(se)電(dian)源開關(guan)置于(yu)“_”狀(zhuang)(zhuang)態(tai)，即為開啟，此時工(gong)作站前面板(ban)(ban).上(shang)(shang)(shang)的(de)紅燈點(dian)亮。在此狀(zhuang)(zhuang)態(tai)下預熱(re)5~10分鐘。2.連接實驗(yan)裝置:a.將(jiang)已經準備好的(de)QCM石(shi)英(ying)(ying)(ying)晶(jing)片有(you)標(biao)記的(de)一面朝上(shang)(shang)(shang)周(zhou)定到(dao)聚四氟乙...

氣體(ti)(ti)擴散(san)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)的(de)(de)三(san)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)體(ti)(ti)系(xi)包括工(gong)作電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)、對(dui)(dui)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)和參比(bi)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)。它們的(de)(de)選(xuan)擇(ze)標準：1.工(gong)作電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)：需滿足三(san)個(ge)條(tiao)件：①所(suo)研究的(de)(de)電(dian)(dian)(dian)(dian)化(hua)學反應不會因電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)自(zi)身所(suo)發生的(de)(de)反應而受到(dao)影響，并且能(neng)夠(gou)在較(jiao)大的(de)(de)電(dian)(dian)(dian)(dian)位區域中進(jin)(jin)行測定。②電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)必(bi)須(xu)不與(yu)溶劑(ji)或電(dian)(dian)(dian)(dian)解(jie)液(ye)組分發生反應。③電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)面積不宜太大，電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)表(biao)面較(jiao)好是均一(yi)(yi)平滑(hua)，且能(neng)夠(gou)通過簡單的(de)(de)方法進(jin)(jin)行表(biao)面凈化(hua)。常(chang)見的(de)(de)“惰性”固體(ti)(ti)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)有(you)玻碳、鉑、金、銀、鉛、導(dao)電(dian)(dian)(dian)(dian)玻璃(FTO,ITO等(deng))。常(chang)用(yong)的(de)(de)液(ye)體(ti)(ti)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)有(you)液(ye)態汞。2.輔(fu)助(zhu)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)：輔(fu)助(zhu)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)也(ye)叫對(dui)(dui)電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)，其(qi)作用(yong)是和工(gong)作電(dian)(dian)(dian)(dian)極(ji)(ji)(ji)(ji)(ji)組成(cheng)一(yi)(yi)個(ge)串聯(lian)回...

電(dian)(dian)化學(xue)噪(zao)(zao)(zao)聲(sheng)測試(shi)儀由(you)CMOS和BiFET集成電(dian)(dian)路組成，用于實(shi)時監(jian)測電(dian)(dian)偶腐蝕或者電(dian)(dian)化學(xue)噪(zao)(zao)(zao)聲(sheng)信號，儀器可(ke)(ke)以(yi)(yi)通過(guo)基于Windows的(de)(de)ENtools軟(ruan)件行設置(由(you)串口控(kong)制)，也可(ke)(ke)以(yi)(yi)直(zhi)接通過(guo)面板觸摸鍵(jian)盤操作。通過(guo)ENtools軟(ruan)件用戶可(ke)(ke)計算電(dian)(dian)偶電(dian)(dian)密度，電(dian)(dian)偶腐蝕速率、噪(zao)(zao)(zao)聲(sheng)電(dian)(dian)阻Rn，以(yi)(yi)及(ji)點蝕指數等。ENtools軟(ruan)件還(huan)具(ju)有(you)較強的(de)(de)繪(hui)圖功(gong)能，支持圖形(xing)矢量方(fang)式，可(ke)(ke)以(yi)(yi)直(zhi)接拷貝到Word文檔中，便于文檔建(jian)立和資料保存。一(yi)、電(dian)(dian)化學(xue)噪(zao)(zao)(zao)聲(sheng)測試(shi)儀的(de)(de)操作步(bu)驟：1.打(da)開電(dian)(dian)源。2.按(an)下LEVER按(an)鈕，選擇合(he)適(shi)的(de)(de)測量...

旋(xuan)(xuan)轉環盤(pan)電(dian)(dian)極是電(dian)(dian)化學(xue)測(ce)量的(de)重(zhong)要工具之一，特別適用(yong)(yong)于研(yan)究電(dian)(dian)極反應(ying)的(de)中(zhong)間產物，對(dui)于研(yan)究電(dian)(dian)極過程作用(yong)(yong)機(ji)理也很(hen)有用(yong)(yong)處，因而在金屬腐蝕(shi)的(de)過程研(yan)究、化學(xue)電(dian)(dian)源(yuan)、電(dian)(dian)分析化學(xue)和(he)電(dian)(dian)有機(ji)合成(cheng)方(fang)面得到了廣泛的(de)應(ying)用(yong)(yong)。一、旋(xuan)(xuan)轉環盤(pan)電(dian)(dian)極的(de)性能參數：1、轉速(su)范圍：50～8000r/min2、精度(du)(du)：測(ce)速(su)精度(du)(du)可達0.5%±1個字(滿度(du)(du))3、轉速(su)穩定度(du)(du)：1500r/min以下標準(zhun)偏差(cha)不大(da)于201500r/min以上相對(dui)標準(zhun)偏差(cha)優于1%4、電(dian)(dian)極頭徑(jing)向跳動≤0.05mm；無軸向竄動5、電(dian)(dian)極與其它部分的(de)絕...

原(yuan)子(zi)沉(chen)積(ji)系(xi)統的(de)原(yuan)子(zi)層(ceng)沉(chen)積(ji)是(shi)在(zai)一個(ge)加(jia)熱反應(ying)的(de)襯底上連(lian)續引入至少兩種氣相前(qian)驅體(ti)源，化(hua)(hua)學吸(xi)(xi)附至表面(mian)飽(bao)和(he)時自動終止，適當(dang)的(de)過程溫度(du)阻礙了(le)分子(zi)在(zai)表面(mian)的(de)物理吸(xi)(xi)附。一個(ge)基(ji)本的(de)原(yuan)子(zi)層(ceng)沉(chen)積(ji)循環包括四個(ge)步驟：脈沖A，清洗A，脈沖B和(he)清洗B。沉(chen)積(ji)循環不斷重復直至獲得所需的(de)薄膜(mo)厚度(du)，是(shi)制(zhi)作納(na)米結構從(cong)而形(xing)成(cheng)納(na)米器件的(de)工具。原(yuan)子(zi)沉(chen)積(ji)系(xi)統的(de)優點包括：1.可以通過控制(zhi)反應(ying)周期(qi)數(shu)準確控制(zhi)薄膜(mo)的(de)厚度(du)，從(cong)而達到原(yuan)子(zi)層(ceng)厚度(du)精度(du)的(de)薄膜(mo)；2.由(you)于前(qian)驅體(ti)是(shi)飽(bao)和(he)化(hua)(hua)學吸(xi)(xi)附，保證生成(cheng)大面(mian)積(ji)均勻性的(de)薄膜(mo)；3.可生成(cheng)較好(hao)的(de)三(san)維保形(xing)...