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微(wei)(wei)(wei)(wei)區(qu)電(dian)化學掃描(miao)顯(xian)微(wei)(wei)(wei)(wei)鏡是一套(tao)多功能的(de)SPM掃描(miao)探針顯(xian)微(wei)(wei)(wei)(wei)鏡系統(tong)，還可以集成(cheng)(cheng)SICM，SECCM等多功能。微(wei)(wei)(wei)(wei)區(qu)電(dian)化學掃描(miao)顯(xian)微(wei)(wei)(wei)(wei)鏡具(ju)備掃描(miao)電(dian)化學顯(xian)微(wei)(wei)(wei)(wei)鏡及(ji)掃描(miao)離子電(dian)導(dao)(dao)顯(xian)微(wei)(wei)(wei)(wei)鏡成(cheng)(cheng)像(SECM/SICM)與(yu)可定制(zhi)模塊化的(de)光(guang)學顯(xian)微(wei)(wei)(wei)(wei)鏡成(cheng)(cheng)像同步聯用(yong)的(de)系統(tong)，此(ci)多功能的(de)儀器(qi)系統(tong)全面覆(fu)蓋細(xi)(xi)胞表面分(fen)析，細(xi)(xi)胞納米形貌成(cheng)(cheng)像，細(xi)(xi)胞膜(mo)表面的(de)離子通道的(de)檢測與(yu)成(cheng)(cheng)像,細(xi)(xi)胞納米力學領域(yu)的(de)研究與(yu)創新，細(xi)(xi)胞活性和生理功能的(de)原位電(dian)化學檢測，以及(ji)神經傳導(dao)(dao)物質(zhi)的(de)原位快(kuai)速檢測，并可升級后兼容熒光(guang)比(bi)值鈣成(cheng)(cheng)像等諸(zhu)多前(qian)沿(yan)應用(yong)。提供原位微(wei)(wei)(wei)(wei)觀(guan)形...

電(dian)(dian)化(hua)學(xue)(xue)石(shi)(shi)英晶(jing)(jing)體(ti)(ti)微(wei)(wei)(wei)天平(ping)是基于(yu)石(shi)(shi)英晶(jing)(jing)體(ti)(ti)振蕩片上吸(xi)(xi)附或沉(chen)(chen)積時，晶(jing)(jing)體(ti)(ti)振蕩頻率發生變(bian)化(hua)，它與(yu)(yu)晶(jing)(jing)片上沉(chen)(chen)積物的(de)質(zhi)量(liang)變(bian)化(hua)有簡單的(de)線性關(guan)系(xi)。電(dian)(dian)化(hua)學(xue)(xue)石(shi)(shi)英晶(jing)(jing)體(ti)(ti)微(wei)(wei)(wei)天平(ping)能在電(dian)(dian)化(hua)學(xue)(xue)反應過程中同(tong)時獲得質(zhi)量(liang)變(bian)化(hua)的(de)信息，檢測(ce)靈敏度(du)可達(da)ng級(ji)。是研究液(ye)/固界面有效的(de)工(gong)具(ju)之一，可用(yong)于(yu)金屬電(dian)(dian)沉(chen)(chen)積與(yu)(yu)腐蝕、吸(xi)(xi)附與(yu)(yu)脫附、成核與(yu)(yu)晶(jing)(jing)體(ti)(ti)成長、電(dian)(dian)化(hua)學(xue)(xue)聚合與(yu)(yu)溶劑(ji)效應、膜的(de)摻雜與(yu)(yu)去摻雜等基本電(dian)(dian)化(hua)學(xue)(xue)行(xing)為的(de)研究。電(dian)(dian)化(hua)學(xue)(xue)石(shi)(shi)英晶(jing)(jing)體(ti)(ti)微(wei)(wei)(wei)天平(ping)的(de)主(zhu)要構(gou)造：電(dian)(dian)化(hua)學(xue)(xue)石(shi)(shi)英晶(jing)(jing)體(ti)(ti)微(wei)(wei)(wei)天平(ping)主(zhu)要由石(shi)(shi)英晶(jing)(jing)體(ti)(ti)傳感器、信號檢測(ce)和數據處理等部分組成。石(shi)(shi)英晶(jing)(jing)體(ti)(ti)傳感器的(de)基本構(gou)...

等(deng)(deng)離(li)子(zi)體表(biao)面(mian)共振(zhen)(zhen)應(ying)用(yong)(yong)(yong)SPR原理檢測生(sheng)物傳感芯片(biosensorchip)上(shang)配位體與分析物之間(jian)的(de)(de)相互作用(yong)(yong)(yong)情況，廣泛應(ying)用(yong)(yong)(yong)于各個(ge)領域。等(deng)(deng)離(li)子(zi)體表(biao)面(mian)共振(zhen)(zhen)的(de)(de)技術原理：等(deng)(deng)離(li)子(zi)體通常(chang)指由密度(du)相當(dang)高的(de)(de)自由正、負(fu)電(dian)(dian)(dian)(dian)荷(he)組成的(de)(de)氣體，其(qi)中(zhong)正、負(fu)帶電(dian)(dian)(dian)(dian)粒(li)子(zi)數目幾乎相等(deng)(deng)。把金屬(shu)(shu)表(biao)面(mian)的(de)(de)價電(dian)(dian)(dian)(dian)子(zi)看成是均勻正電(dian)(dian)(dian)(dian)荷(he)背景(jing)下運動的(de)(de)電(dian)(dian)(dian)(dian)子(zi)氣體，這實際上(shang)也是一種等(deng)(deng)離(li)子(zi)體。當(dang)金屬(shu)(shu)受電(dian)(dian)(dian)(dian)磁干擾時，金屬(shu)(shu)內部(bu)(bu)的(de)(de)電(dian)(dian)(dian)(dian)子(zi)密度(du)分布(bu)會變(bian)得不均勻。因為庫侖(lun)力(li)的(de)(de)存在，會將(jiang)部(bu)(bu)分電(dian)(dian)(dian)(dian)子(zi)吸引到正電(dian)(dian)(dian)(dian)荷(he)過剩(sheng)的(de)(de)區域，被吸引的(de)(de)電(dian)(dian)(dian)(dian)子(zi)由于獲得動量，故不會在引力(li)與斥...

可逆氫參(can)(can)(can)比(bi)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)是測(ce)(ce)(ce)量(liang)各種電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)電(dian)勢(shi)時(shi)(shi)作為參(can)(can)(can)照比(bi)較的(de)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)。將(jiang)被測(ce)(ce)(ce)定(ding)的(de)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)與準確已知電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)電(dian)勢(shi)數(shu)值的(de)參(can)(can)(can)比(bi)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)構成電(dian)池(chi)，測(ce)(ce)(ce)定(ding)電(dian)池(chi)電(dian)動勢(shi)數(shu)值，就可計算出(chu)被測(ce)(ce)(ce)定(ding)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)的(de)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)電(dian)勢(shi)。可逆氫參(can)(can)(can)比(bi)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)的(de)正確使用(yong)方法：1.使用(yong)時(shi)(shi)應拔去加液(ye)口橡皮(pi)塞(sai)，以(yi)使鹽橋(qiao)(qiao)溶液(ye)借重力作用(yong)維持一定(ding)流速滲漏于(yu)與待測(ce)(ce)(ce)溶液(ye)通路。玻璃(li)加液(ye)口和橡皮(pi)塞(sai)應該經常插洗(xi)保存。2.測(ce)(ce)(ce)量(liang)時(shi)(shi)，參(can)(can)(can)比(bi)電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)鹽橋(qiao)(qiao)液(ye)面(mian)應高于(yu)待測(ce)(ce)(ce)界面(mian)(2~3)cm，以(yi)防止(zhi)待測(ce)(ce)(ce)液(ye)向(xiang)甘汞電(dian)極(ji)(ji)(ji)(ji)(ji)(ji)內擴散(san)(san)，如待測(ce)(ce)(ce)液(ye)中含有氯(lv)化(hua)物、硫化(hua)物、絡合劑、銀鹽和過氯(lv)酸鹽等向(xiang)內擴散(san)(san)，都將(jiang)影響參(can)(can)(can)比(bi)電(dian)...

電化學(xue)噪(zao)聲(sheng)測試儀(yi)(yi)用于監測電偶腐(fu)蝕或(huo)者電化學(xue)噪(zao)聲(sheng)信號，具有(you)(you)較高(gao)(gao)的(de)靈敏度(du)，儀(yi)(yi)器(qi)全部由高(gao)(gao)品質(zhi)CMOS和(he)BiFET?集成電路(lu)組(zu)成，采(cai)用高(gao)(gao)可(ke)靠性(xing)的(de)Philip工(gong)業級單片(pian)機控制芯片(pian)，以(yi)及TI公(gong)司(si)的(de)高(gao)(gao)精(jing)度(du)數據轉換(huan)器(qi)ADS1211，其zui高(gao)(gao)分辨率(lv)(lv)為24bit@10Hz，zui高(gao)(gao)采(cai)樣速率(lv)(lv)為1000Hz，儀(yi)(yi)器(qi)內部采(cai)用了(le)Maxim公(gong)司(si)的(de)斬(zhan)波穩零(ling)放大器(qi)Max7650，其溫(wen)漂(piao)小于1uV/℃，時(shi)漂(piao)小于10uV/Month，內置二階低(di)通濾(lv)波器(qi)，可(ke)以(yi)有(you)(you)效消除高(gao)(gao)頻(pin)噪(zao)聲(sheng)進入測量單元(yuan)，儀(yi)(yi)器(qi)還內置EMI濾(lv)波器(qi)，可(ke)...